INFLUENCE OF THE BASE DOPING RATE ON THE DIFFUSION AND ELECTRONIC PARAMETERS OF A SILICON PHOTOVOLTAIC CELL UNDER STRONG ILLUMINATION. International Journal of Engineering Sciences & Research Technology, [S. l.], v. 13, n. 11, p. 1–8, 2024. Disponível em: https://www.ijesrt.com/index.php/J-ijesrt/article/view/116.. Acesso em: 21 may. 2025.