INFLUENCE OF THE BASE DOPING RATE ON THE DIFFUSION AND ELECTRONIC PARAMETERS OF A SILICON PHOTOVOLTAIC CELL UNDER STRONG ILLUMINATION

Abstract

The characterization of the performance of a photovoltaic cell can be linked to factors intrinsic to this cell. It therefore seems necessary to identify the favourable or unfavourable conditions for the performance of photovoltaic cells. It is with this in mind that we think it is wise to study the influence of the base doping rate on the performance of a silicon PV cell under intense illumination of 50 suns. After a mathematical modelling of the PV cell considered and a few hypotheses formulated, the expressions of the diffusion parameters and the electronic parameters are established according to the doping rate of the database. Subsequently, we use digital processing to highlight the behaviours of these parameters according to the level of doping of the database. The results show that when the base doping rate increases, the diffusion and recombination parameters decrease. On the other hand, we see an increase in the density of load carriers when the doping rate of the base increases.