DETERMINATION OF CURRENT DENSITY AND RECOMBINATION RATE OF BORON DOPED BACKGROUND AND PHOSPHORUS DOPED EMITTER SILICON SOLAR CELL UNDER MONOCHROMATIC ILLUMINATION.

Authors

  • Papa Touty Traore*, Modou Pilor, Mor Ndiaye, and Issa Diagne Author

Keywords:

current density, recombination, emitter, silicon, solar cell

Abstract

The aim of the work is to determine the recombination in a heavily doped region of silicon, such as an emitter. The emitter saturation current density is also determined in this work. The model set-up an emitter's surface recombination velocity from an experimentally measured J0E.Also both types are considered such that, the radiative and the auger. The SHR recombination is applied in the emitter. The dopand species is the phosphorus in the emitter and the boron in the background. The recombination rate and the current density are obtained under the monochromatic light illumination and the outdoor temperature. 

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Published

2023-05-30

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Section

Articles

How to Cite

DETERMINATION OF CURRENT DENSITY AND RECOMBINATION RATE OF BORON DOPED BACKGROUND AND PHOSPHORUS DOPED EMITTER SILICON SOLAR CELL UNDER MONOCHROMATIC ILLUMINATION. (2023). International Journal of Engineering Sciences & Research Technology, 12(5), 1-5. https://www.ijesrt.com/index.php/J-ijesrt/article/view/8

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